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STUDY BY RAMAN SPECTROSCOPY OF THE INDUCED RADIATION DAMAGE IN GaAr:Cr EXPOSED TO 20 MeV ELECTRON BEAM.

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Title: STUDY BY RAMAN SPECTROSCOPY OF THE INDUCED RADIATION DAMAGE IN GaAr:Cr EXPOSED TO 20 MeV ELECTRON BEAM.
Alternate Title: ESTUDIO MEDIANTE LA ESPECTROSCOPÍA RAMAN DEL DAÑO RADIACIONAL INDUCIDO EN EL GaAr:Cr EXPUESTO A UN HAZ DE ELECTRONES DE 20 MeV.
Authors: LEYVA-FABELO, A.1,2 aleyva@jinr.ru, LEYVA-PERNÍA, D.3, RUBIERA-GIMENO, J. A.3, CRUZ-INCLÁN, C. M.1, VALDÉS-ALBUERNES, JORGE L.4, KOBETS, V.2, ABOU-EL-AZM, S.2, KRUCHONAK, U.2, ZHEMCHUGOV, A.2, SHELKOV, G.2, PÁEZ-RODRÍGUEZ, A.4, MAYETA-AGUILERA, M.4
Source: Revista Cubana de Física. jul2021, Vol. 38 Issue 1, p4-9. 6p.
Subjects: RADIATION damage, RAMAN spectroscopy, GALLIUM arsenide semiconductors, SEMICONDUCTOR detectors, CARRIER density, ELECTRON beams, RAMAN scattering
Abstract (English): In this work, we use Raman spectroscopy to search for evidence of possible radiation damage in a chromium-compensated gallium arsenide semiconductor detector exposed to a 20 MeV electron beam. The Raman spectra measured before and after irradiation were deconvoluted, and their analysis shows that relevant processes stimulated by radiation take place in the material. These processes lead to the relaxation of the structure tensional state, the enhancement of crystallinity, and a decrease in the concentration of free carriers, which in the studied sample volume reaches 2.31 %. The observed changes could be related to the generation of new Frenkel-type defects in the arsenic sublattice, and to radiation-stimulated changes in the quantity and quality of pre-existing more complex defects. [ABSTRACT FROM AUTHOR]
Abstract (Spanish): En este trabajo la espectroscopía Raman ha sido empleada en la búsqueda de evidencias del posible daño radiacional en un detector semiconductor de radiaciones de arseniuro de galio compensado con cromo al ser expuesto a un haz de electrones de 20 MeV. Los espectros Raman tomados antes y después de la irradiación fueron deconvolucionados y su análisis mostraron que efectivamente en el material estaban teniendo lugar significativos procesos estimulados por la radiación. Estos procesos conducen a la relajación del estado tensional de la estructura, al incremento de la cristalinidad, y a la disminucóon de la concentración de portadores libres, que en el volumen estudiado de la muestra alcanza un 2.31 %. Los cambios observados deben estar relacionados con la generación de defectos de tipo Frenkel en la subred del arsénico, y a cambios radiacionalmente estimulados en la cantidad y características de defectos preexistente de mayor complejidad. [ABSTRACT FROM AUTHOR]
Copyright of Revista Cubana de Física is the property of Universidad de La Habana and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: STUDY BY RAMAN SPECTROSCOPY OF THE INDUCED RADIATION DAMAGE IN GaAr:Cr EXPOSED TO 20 MeV ELECTRON BEAM.
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  Data: ESTUDIO MEDIANTE LA ESPECTROSCOPÍA RAMAN DEL DAÑO RADIACIONAL INDUCIDO EN EL GaAr:Cr EXPUESTO A UN HAZ DE ELECTRONES DE 20 MeV.
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  Data: <searchLink fieldCode="AR" term="%22LEYVA-FABELO%2C+A%2E%22">LEYVA-FABELO, A.</searchLink><relatesTo>1,2</relatesTo><i> aleyva@jinr.ru</i><br /><searchLink fieldCode="AR" term="%22LEYVA-PERNÍA%2C+D%2E%22">LEYVA-PERNÍA, D.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22RUBIERA-GIMENO%2C+J%2E+A%2E%22">RUBIERA-GIMENO, J. A.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22CRUZ-INCLÁN%2C+C%2E+M%2E%22">CRUZ-INCLÁN, C. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22VALDÉS-ALBUERNES%2C+JORGE+L%2E%22">VALDÉS-ALBUERNES, JORGE L.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22KOBETS%2C+V%2E%22">KOBETS, V.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22ABOU-EL-AZM%2C+S%2E%22">ABOU-EL-AZM, S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22KRUCHONAK%2C+U%2E%22">KRUCHONAK, U.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22ZHEMCHUGOV%2C+A%2E%22">ZHEMCHUGOV, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22SHELKOV%2C+G%2E%22">SHELKOV, G.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22PÁEZ-RODRÍGUEZ%2C+A%2E%22">PÁEZ-RODRÍGUEZ, A.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22MAYETA-AGUILERA%2C+M%2E%22">MAYETA-AGUILERA, M.</searchLink><relatesTo>4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Revista+Cubana+de+Física%22">Revista Cubana de Física</searchLink>. jul2021, Vol. 38 Issue 1, p4-9. 6p.
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  Data: <searchLink fieldCode="DE" term="%22RADIATION+damage%22">RADIATION damage</searchLink><br /><searchLink fieldCode="DE" term="%22RAMAN+spectroscopy%22">RAMAN spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22GALLIUM+arsenide+semiconductors%22">GALLIUM arsenide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22SEMICONDUCTOR+detectors%22">SEMICONDUCTOR detectors</searchLink><br /><searchLink fieldCode="DE" term="%22CARRIER+density%22">CARRIER density</searchLink><br /><searchLink fieldCode="DE" term="%22ELECTRON+beams%22">ELECTRON beams</searchLink><br /><searchLink fieldCode="DE" term="%22RAMAN+scattering%22">RAMAN scattering</searchLink>
– Name: Abstract
  Label: Abstract (English)
  Group: Ab
  Data: In this work, we use Raman spectroscopy to search for evidence of possible radiation damage in a chromium-compensated gallium arsenide semiconductor detector exposed to a 20 MeV electron beam. The Raman spectra measured before and after irradiation were deconvoluted, and their analysis shows that relevant processes stimulated by radiation take place in the material. These processes lead to the relaxation of the structure tensional state, the enhancement of crystallinity, and a decrease in the concentration of free carriers, which in the studied sample volume reaches 2.31 %. The observed changes could be related to the generation of new Frenkel-type defects in the arsenic sublattice, and to radiation-stimulated changes in the quantity and quality of pre-existing more complex defects. [ABSTRACT FROM AUTHOR]
– Name: Abstract
  Label: Abstract (Spanish)
  Group: Ab
  Data: En este trabajo la espectroscopía Raman ha sido empleada en la búsqueda de evidencias del posible daño radiacional en un detector semiconductor de radiaciones de arseniuro de galio compensado con cromo al ser expuesto a un haz de electrones de 20 MeV. Los espectros Raman tomados antes y después de la irradiación fueron deconvolucionados y su análisis mostraron que efectivamente en el material estaban teniendo lugar significativos procesos estimulados por la radiación. Estos procesos conducen a la relajación del estado tensional de la estructura, al incremento de la cristalinidad, y a la disminucóon de la concentración de portadores libres, que en el volumen estudiado de la muestra alcanza un 2.31 %. Los cambios observados deben estar relacionados con la generación de defectos de tipo Frenkel en la subred del arsénico, y a cambios radiacionalmente estimulados en la cantidad y características de defectos preexistente de mayor complejidad. [ABSTRACT FROM AUTHOR]
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  Label:
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  Data: <i>Copyright of Revista Cubana de Física is the property of Universidad de La Habana and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Code: eng
        Text: English
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        StartPage: 4
    Subjects:
      – SubjectFull: RADIATION damage
        Type: general
      – SubjectFull: RAMAN spectroscopy
        Type: general
      – SubjectFull: GALLIUM arsenide semiconductors
        Type: general
      – SubjectFull: SEMICONDUCTOR detectors
        Type: general
      – SubjectFull: CARRIER density
        Type: general
      – SubjectFull: ELECTRON beams
        Type: general
      – SubjectFull: RAMAN scattering
        Type: general
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      – TitleFull: STUDY BY RAMAN SPECTROSCOPY OF THE INDUCED RADIATION DAMAGE IN GaAr:Cr EXPOSED TO 20 MeV ELECTRON BEAM.
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