APA (7th ed.) Citation

SH, C., CW, S., LH, C., & TH, T. (2017). Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy. Microscopy research and technique, 80(7), 731. https://doi.org/10.1002/jemt.22858

Chicago Style (17th ed.) Citation

SH, Chen, Su CW, Chang LH, and Tsai TH. "Differences in the Nanoscale Electrical Properties of GaN Films Grown on Sapphire and ZnO Substrates by Molecular Beam Epitaxy." Microscopy Research and Technique 80, no. 7 (2017): 731. https://doi.org/10.1002/jemt.22858.

MLA (9th ed.) Citation

SH, Chen, et al. "Differences in the Nanoscale Electrical Properties of GaN Films Grown on Sapphire and ZnO Substrates by Molecular Beam Epitaxy." Microscopy Research and Technique, vol. 80, no. 7, 2017, p. 731, https://doi.org/10.1002/jemt.22858.