Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy.
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| Title: | Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy. |
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| Authors: | Chen SH; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan., Su CW; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan., Chang LH; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan., Tsai TH; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan. |
| Source: | Microscopy research and technique [Microsc Res Tech] 2017 Jul; Vol. 80 (7), pp. 731-736. Date of Electronic Publication: 2017 Feb 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-Liss Country of Publication: United States NLM ID: 9203012 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1097-0029 (Electronic) Linking ISSN: 1059910X NLM ISO Abbreviation: Microsc Res Tech Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 28248446 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chen+SH%22">Chen SH</searchLink>; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan.<br /><searchLink fieldCode="AU" term="%22Su+CW%22">Su CW</searchLink>; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chang+LH%22">Chang LH</searchLink>; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan.<br /><searchLink fieldCode="AU" term="%22Tsai+TH%22">Tsai TH</searchLink>; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%229203012%22">Microscopy research and technique</searchLink> [Microsc Res Tech] 2017 Jul; Vol. 80 (7), pp. 731-736. <i>Date of Electronic Publication: </i>2017 Feb 28. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-Liss%22">Wiley-Liss </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>9203012 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1097-0029 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%221059910X%22">1059910X </searchLink><i>NLM ISO Abbreviation: </i>Microsc Res Tech <i>Subsets: </i>PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=28248446 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/jemt.22858 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 731 Titles: – TitleFull: Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen SH – PersonEntity: Name: NameFull: Su CW – PersonEntity: Name: NameFull: Chang LH – PersonEntity: Name: NameFull: Tsai TH IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2017 Jul Type: published Y: 2017 Identifiers: – Type: issn-electronic Value: 1097-0029 Numbering: – Type: volume Value: 80 – Type: issue Value: 7 Titles: – TitleFull: Microscopy research and technique Type: main |
| ResultId | 1 |
