Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy.
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| Title: | Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy. |
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| Authors: | Chen SH; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan., Su CW; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan., Chang LH; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan., Tsai TH; Department of Electrophysics, National Chiayi University, Chiayi, 600, Taiwan. |
| Source: | Microscopy research and technique [Microsc Res Tech] 2017 Jul; Vol. 80 (7), pp. 731-736. Date of Electronic Publication: 2017 Feb 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-Liss Country of Publication: United States NLM ID: 9203012 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1097-0029 (Electronic) Linking ISSN: 1059910X NLM ISO Abbreviation: Microsc Res Tech Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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