Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability.

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Title: Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability.
Authors: Kwak DH; Department of Energy Science and Engineering, DGIST, Daegu, 42988, Republic of Korea., Ra HS; Department of Energy Science and Engineering, DGIST, Daegu, 42988, Republic of Korea., Yang J; School of Materials Science and Engineering, GIST, Gwangju, 61005, Republic of Korea., Jeong MH; Department of Energy Science and Engineering, DGIST, Daegu, 42988, Republic of Korea., Lee AY; Department of Energy Science and Engineering, DGIST, Daegu, 42988, Republic of Korea., Lee W; Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeonbuk, 55324, Republic of Korea., Hwang JY; Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeonbuk, 55324, Republic of Korea., Lee JH; School of Materials Science and Engineering, GIST, Gwangju, 61005, Republic of Korea., Lee JS; Department of Energy Science and Engineering, DGIST, Daegu, 42988, Republic of Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2018 Feb; Vol. 14 (6). Date of Electronic Publication: 2017 Dec 06.
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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