APA (7th ed.) Citation

HS, R., AY, L., DH, K., MH, J., & JS, L. (2018). Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers. ACS applied materials & interfaces, 10(1), 925. https://doi.org/10.1021/acsami.7b16809

Chicago Style (17th ed.) Citation

HS, Ra, Lee AY, Kwak DH, Jeong MH, and Lee JS. "Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers." ACS Applied Materials & Interfaces 10, no. 1 (2018): 925. https://doi.org/10.1021/acsami.7b16809.

MLA (9th ed.) Citation

HS, Ra, et al. "Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers." ACS Applied Materials & Interfaces, vol. 10, no. 1, 2018, p. 925, https://doi.org/10.1021/acsami.7b16809.