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Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.

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Title: Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
Authors: Ra HS; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Lee AY; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Kwak DH; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Jeong MH; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Lee JS; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2018 Jan 10; Vol. 10 (1), pp. 925-932. Date of Electronic Publication: 2017 Dec 27.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
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  Data: <searchLink fieldCode="AU" term="%22Ra+HS%22">Ra HS</searchLink>; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+AY%22">Lee AY</searchLink>; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kwak+DH%22">Kwak DH</searchLink>; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+MH%22">Jeong MH</searchLink>; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+JS%22">Lee JS</searchLink>; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2018 Jan 10; Vol. 10 (1), pp. 925-932. <i>Date of Electronic Publication: </i>2017 Dec 27.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=29256593
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        Value: 10.1021/acsami.7b16809
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      – Code: eng
        Text: English
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        StartPage: 925
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      – TitleFull: Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
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            NameFull: Ra HS
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            NameFull: Lee AY
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            NameFull: Kwak DH
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            NameFull: Jeong MH
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              Text: 2018 Jan 10
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