Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
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| Title: | Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers. |
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| Authors: | Ra HS; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Lee AY; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Kwak DH; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Jeong MH; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea., Lee JS; Department of Energy Science and Engineering, DGIST , Daegu 42988, Republic of Korea. |
| Source: | ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2018 Jan 10; Vol. 10 (1), pp. 925-932. Date of Electronic Publication: 2017 Dec 27. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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