Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

Saved in:
Bibliographic Details
Title: Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.
Authors: Lin S; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Carvalho A; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore., Yan S; School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, 210023, Nanjing, People's Republic of China., Li R; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA., Kim S; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA., Rodin A; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore., Carvalho L; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore., Chan EM; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Wang X; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA., Castro Neto AH; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore., Yao J; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. yaojie@berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. yaojie@berkeley.edu.
Source: Nature communications [Nat Commun] 2018 Apr 13; Vol. 9 (1), pp. 1455. Date of Electronic Publication: 2018 Apr 13.
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
FullText Links:
  – Type: pdflink
Text:
  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 29654301
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Lin+S%22">Lin S</searchLink>; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.<br /><searchLink fieldCode="AU" term="%22Carvalho+A%22">Carvalho A</searchLink>; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.<br /><searchLink fieldCode="AU" term="%22Yan+S%22">Yan S</searchLink>; School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, 210023, Nanjing, People's Republic of China.<br /><searchLink fieldCode="AU" term="%22Li+R%22">Li R</searchLink>; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.<br /><searchLink fieldCode="AU" term="%22Kim+S%22">Kim S</searchLink>; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.<br /><searchLink fieldCode="AU" term="%22Rodin+A%22">Rodin A</searchLink>; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.<br /><searchLink fieldCode="AU" term="%22Carvalho+L%22">Carvalho L</searchLink>; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.<br /><searchLink fieldCode="AU" term="%22Chan+EM%22">Chan EM</searchLink>; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.<br /><searchLink fieldCode="AU" term="%22Wang+X%22">Wang X</searchLink>; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.<br /><searchLink fieldCode="AU" term="%22Castro+Neto+AH%22">Castro Neto AH</searchLink>; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.<br /><searchLink fieldCode="AU" term="%22Yao+J%22">Yao J</searchLink>; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. yaojie@berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. yaojie@berkeley.edu.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2018 Apr 13; Vol. 9 (1), pp. 1455. <i>Date of Electronic Publication: </i>2018 Apr 13.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article; Research Support, Non-U.S. Gov't
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Pub%2E+Group%22">Nature Pub. Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101528555 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2041-1723 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220411723%22">20411723 </searchLink><i>NLM ISO Abbreviation: </i>Nat Commun <i>Subsets: </i>PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=29654301
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1038/s41467-018-03897-3
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 1455
    Titles:
      – TitleFull: Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Lin S
      – PersonEntity:
          Name:
            NameFull: Carvalho A
      – PersonEntity:
          Name:
            NameFull: Yan S
      – PersonEntity:
          Name:
            NameFull: Li R
      – PersonEntity:
          Name:
            NameFull: Kim S
      – PersonEntity:
          Name:
            NameFull: Rodin A
      – PersonEntity:
          Name:
            NameFull: Carvalho L
      – PersonEntity:
          Name:
            NameFull: Chan EM
      – PersonEntity:
          Name:
            NameFull: Wang X
      – PersonEntity:
          Name:
            NameFull: Castro Neto AH
      – PersonEntity:
          Name:
            NameFull: Yao J
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 13
              M: 04
              Text: 2018 Apr 13
              Type: published
              Y: 2018
          Identifiers:
            – Type: issn-electronic
              Value: 2041-1723
          Numbering:
            – Type: volume
              Value: 9
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Nature communications
              Type: main
ResultId 1