APA (7th ed.) Citation

MG, K., YY, L., AG, C., EV, K., AA, C., RR, K., . . . CS, H. (2019). Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2. The Journal of chemical physics, 151(20), 204701. https://doi.org/10.1063/1.5107509

Chicago Style (17th ed.) Citation

MG, Kozodaev, Lebedinskii YY, Chernikova AG, Korostylev EV, Chouprik AA, Khakimov RR, Markeev AM, and Hwang CS. "Temperature Controlled Ru and RuO2 Growth via O* Radical-enhanced Atomic Layer Deposition with Ru(EtCp)2." The Journal of Chemical Physics 151, no. 20 (2019): 204701. https://doi.org/10.1063/1.5107509.

MLA (9th ed.) Citation

MG, Kozodaev, et al. "Temperature Controlled Ru and RuO2 Growth via O* Radical-enhanced Atomic Layer Deposition with Ru(EtCp)2." The Journal of Chemical Physics, vol. 151, no. 20, 2019, p. 204701, https://doi.org/10.1063/1.5107509.