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Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2.

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Title: Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2.
Authors: Kozodaev MG; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Lebedinskii YY; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Chernikova AG; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Korostylev EV; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Chouprik AA; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Khakimov RR; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Markeev AM; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Hwang CS; Department of Materials Science and Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea.
Source: The Journal of chemical physics [J Chem Phys] 2019 Nov 28; Vol. 151 (20), pp. 204701.
Publication Type: Journal Article
Journal Info: Publisher: American Institute of Physics Country of Publication: United States NLM ID: 0375360 Publication Model: Print Cited Medium: Internet ISSN: 1089-7690 (Electronic) Linking ISSN: 00219606 NLM ISO Abbreviation: J Chem Phys Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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PubType: Academic Journal
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  Data: Temperature controlled Ru and RuO<subscript>2</subscript> growth via O<superscript>*</superscript> radical-enhanced atomic layer deposition with Ru(EtCp)<subscript>2</subscript>.
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  Data: <searchLink fieldCode="AU" term="%22Kozodaev+MG%22">Kozodaev MG</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Lebedinskii+YY%22">Lebedinskii YY</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Chernikova+AG%22">Chernikova AG</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Korostylev+EV%22">Korostylev EV</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Chouprik+AA%22">Chouprik AA</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Khakimov+RR%22">Khakimov RR</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Markeev+AM%22">Markeev AM</searchLink>; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia.<br /><searchLink fieldCode="AU" term="%22Hwang+CS%22">Hwang CS</searchLink>; Department of Materials Science and Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea.
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  Data: <searchLink fieldCode="JN" term="%220375360%22">The Journal of chemical physics</searchLink> [J Chem Phys] 2019 Nov 28; Vol. 151 (20), pp. 204701.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Institute+of+Physics%22">American Institute of Physics </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>0375360 <i>Publication Model: </i>Print <i>Cited Medium: </i>Internet <i>ISSN: </i>1089-7690 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2200219606%22">00219606 </searchLink><i>NLM ISO Abbreviation: </i>J Chem Phys <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1063/1.5107509
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      – Code: eng
        Text: English
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        StartPage: 204701
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      – TitleFull: Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2.
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            – D: 28
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              Text: 2019 Nov 28
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              Y: 2019
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