| Authors: |
Kozodaev MG; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Lebedinskii YY; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Chernikova AG; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Korostylev EV; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Chouprik AA; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Khakimov RR; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Markeev AM; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Hwang CS; Department of Materials Science and Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea. |
