Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2.
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| Title: | Temperature controlled Ru and RuO |
|---|---|
| Authors: | Kozodaev MG; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Lebedinskii YY; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Chernikova AG; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Korostylev EV; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Chouprik AA; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Khakimov RR; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Markeev AM; Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia., Hwang CS; Department of Materials Science and Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea. |
| Source: | The Journal of chemical physics [J Chem Phys] 2019 Nov 28; Vol. 151 (20), pp. 204701. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Institute of Physics Country of Publication: United States NLM ID: 0375360 Publication Model: Print Cited Medium: Internet ISSN: 1089-7690 (Electronic) Linking ISSN: 00219606 NLM ISO Abbreviation: J Chem Phys Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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