APA (7th ed.) Citation

V, M., A, C., Y, L., S, Z., AM, M., AV, Z., & D, N. (2020). Memristor with a ferroelectric HfO2 layer: In which case it is a ferroelectric tunnel junction. Nanotechnology, 31(21), 215205. https://doi.org/10.1088/1361-6528/ab746d

Chicago Style (17th ed.) Citation

V, Mikheev, Chouprik A, Lebedinskii Y, Zarubin S, Markeev AM, Zenkevich AV, and Negrov D. "Memristor with a Ferroelectric HfO2 Layer: In Which Case It Is a Ferroelectric Tunnel Junction." Nanotechnology 31, no. 21 (2020): 215205. https://doi.org/10.1088/1361-6528/ab746d.

MLA (9th ed.) Citation

V, Mikheev, et al. "Memristor with a Ferroelectric HfO2 Layer: In Which Case It Is a Ferroelectric Tunnel Junction." Nanotechnology, vol. 31, no. 21, 2020, p. 215205, https://doi.org/10.1088/1361-6528/ab746d.