Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction.

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Title: Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction.
Authors: Mikheev V; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Chouprik A; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Lebedinskii Y; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Zarubin S; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Markeev AM; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Zenkevich AV; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Negrov D; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.
Source: Nanotechnology [Nanotechnology] 2020 May 22; Vol. 31 (21), pp. 215205. Date of Electronic Publication: 2020 Feb 10.
Publication Type: Journal Article
Journal Info: Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Memristor with a ferroelectric HfO<subscript>2</subscript> layer: in which case it is a ferroelectric tunnel junction.
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  Data: <searchLink fieldCode="AU" term="%22Mikheev+V%22">Mikheev V</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.<br /><searchLink fieldCode="AU" term="%22Chouprik+A%22">Chouprik A</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.<br /><searchLink fieldCode="AU" term="%22Lebedinskii+Y%22">Lebedinskii Y</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.<br /><searchLink fieldCode="AU" term="%22Zarubin+S%22">Zarubin S</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.<br /><searchLink fieldCode="AU" term="%22Markeev+AM%22">Markeev AM</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.<br /><searchLink fieldCode="AU" term="%22Zenkevich+AV%22">Zenkevich AV</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.<br /><searchLink fieldCode="AU" term="%22Negrov+D%22">Negrov D</searchLink>; Moscow Institute of Physics and Technology, Dolgoprudny, Russia.
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  Data: <searchLink fieldCode="JN" term="%22101241272%22">Nanotechnology</searchLink> [Nanotechnology] 2020 May 22; Vol. 31 (21), pp. 215205. <i>Date of Electronic Publication: </i>2020 Feb 10.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22IOP+Pub%22">IOP Pub </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101241272 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1361-6528 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209574484%22">09574484 </searchLink><i>NLM ISO Abbreviation: </i>Nanotechnology <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1088/1361-6528/ab746d
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              Text: 2020 May 22
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