Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction.
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| Title: | Memristor with a ferroelectric HfO |
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| Authors: | Mikheev V; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Chouprik A; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Lebedinskii Y; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Zarubin S; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Markeev AM; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Zenkevich AV; Moscow Institute of Physics and Technology, Dolgoprudny, Russia., Negrov D; Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
| Source: | Nanotechnology [Nanotechnology] 2020 May 22; Vol. 31 (21), pp. 215205. Date of Electronic Publication: 2020 Feb 10. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1361-6528 |
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| DOI: | 10.1088/1361-6528/ab746d |
