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Probing the Importance of Charge Balance and Noise Current in WSe2/WS2/MoS2 van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping.

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Title: Probing the Importance of Charge Balance and Noise Current in WSe2/WS2/MoS2 van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping.
Authors: Ra HS; Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea., Jeong MH; Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea., Yoon T; Department of Nano Engineering Sungkyunkwan University (SKKU) Suwon 16419 Korea.; SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Korea., Kim S; Department of Nano Engineering Sungkyunkwan University (SKKU) Suwon 16419 Korea., Song YJ; Department of Nano Engineering Sungkyunkwan University (SKKU) Suwon 16419 Korea.; SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Korea., Lee JS; Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea.
Source: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2020 Aug 18; Vol. 7 (19), pp. 2001475. Date of Electronic Publication: 2020 Aug 18 (Print Publication: 2020).
Publication Type: Journal Article
Journal Info: Publisher: WILEY-VCH Country of Publication: Germany NLM ID: 101664569 Publication Model: eCollection Cited Medium: Print ISSN: 2198-3844 (Print) Linking ISSN: 21983844 NLM ISO Abbreviation: Adv Sci (Weinh) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Probing the Importance of Charge Balance and Noise Current in WSe<subscript>2</subscript>/WS<subscript>2</subscript>/MoS<subscript>2</subscript> van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping.
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  Data: <searchLink fieldCode="AU" term="%22Ra+HS%22">Ra HS</searchLink>; Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+MH%22">Jeong MH</searchLink>; Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+T%22">Yoon T</searchLink>; Department of Nano Engineering Sungkyunkwan University (SKKU) Suwon 16419 Korea.; SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Korea.<br /><searchLink fieldCode="AU" term="%22Kim+S%22">Kim S</searchLink>; Department of Nano Engineering Sungkyunkwan University (SKKU) Suwon 16419 Korea.<br /><searchLink fieldCode="AU" term="%22Song+YJ%22">Song YJ</searchLink>; Department of Nano Engineering Sungkyunkwan University (SKKU) Suwon 16419 Korea.; SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Korea.<br /><searchLink fieldCode="AU" term="%22Lee+JS%22">Lee JS</searchLink>; Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101664569%22">Advanced science (Weinheim, Baden-Wurttemberg, Germany)</searchLink> [Adv Sci (Weinh)] 2020 Aug 18; Vol. 7 (19), pp. 2001475. <i>Date of Electronic Publication: </i>2020 Aug 18 (<i>Print Publication: </i>2020).
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