APA (7th ed.) Citation

AA, K., AG, C., AA, C., ES, G., AS, S., RR, K., . . . AM, M. (2020). Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures. ACS applied materials & interfaces, 12(49), 55331. https://doi.org/10.1021/acsami.0c14810

Chicago Style (17th ed.) Citation

AA, Koroleva, Chernikova AG, Chouprik AA, Gornev ES, Slavich AS, Khakimov RR, Korostylev EV, Hwang CS, and Markeev AM. "Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures." ACS Applied Materials & Interfaces 12, no. 49 (2020): 55331. https://doi.org/10.1021/acsami.0c14810.

MLA (9th ed.) Citation

AA, Koroleva, et al. "Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures." ACS Applied Materials & Interfaces, vol. 12, no. 49, 2020, p. 55331, https://doi.org/10.1021/acsami.0c14810.