| Authors: |
Koroleva AA; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Chernikova AG; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Chouprik AA; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Gornev ES; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.; Molecular Electronics Research Institute, 12/1 Akademika Valieva Street, Zelenograd, Moscow 124460, Russian Federation., Slavich AS; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Khakimov RR; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Korostylev EV; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Hwang CS; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea., Markeev AM; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation. |
