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Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures.

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Title: Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures.
Authors: Koroleva AA; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Chernikova AG; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Chouprik AA; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Gornev ES; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.; Molecular Electronics Research Institute, 12/1 Akademika Valieva Street, Zelenograd, Moscow 124460, Russian Federation., Slavich AS; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Khakimov RR; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Korostylev EV; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation., Hwang CS; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea., Markeev AM; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Dec 09; Vol. 12 (49), pp. 55331-55341. Date of Electronic Publication: 2020 Nov 15.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaO<subscript>x</subscript>-Based Memory Structures.
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  Data: <searchLink fieldCode="AU" term="%22Koroleva+AA%22">Koroleva AA</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Chernikova+AG%22">Chernikova AG</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Chouprik+AA%22">Chouprik AA</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Gornev+ES%22">Gornev ES</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.; Molecular Electronics Research Institute, 12/1 Akademika Valieva Street, Zelenograd, Moscow 124460, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Slavich+AS%22">Slavich AS</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Khakimov+RR%22">Khakimov RR</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Korostylev+EV%22">Korostylev EV</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.<br /><searchLink fieldCode="AU" term="%22Hwang+CS%22">Hwang CS</searchLink>; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea.<br /><searchLink fieldCode="AU" term="%22Markeev+AM%22">Markeev AM</searchLink>; Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2020 Dec 09; Vol. 12 (49), pp. 55331-55341. <i>Date of Electronic Publication: </i>2020 Nov 15.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1021/acsami.0c14810
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        Text: English
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      – TitleFull: Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures.
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              Text: 2020 Dec 09
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