Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures. - Koroleva AA; Chernikova AG; Chouprik AA; Gornev ES; Slavich AS; Khakimov RR; Korostylev EV; Hwang CS; Markeev AM (ACS applied materials & interfaces, 2020)