MN, A., M, S., BC, O., EJ, L., SY, S., M, T., & JM, B. (2021). Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon. Nano letters, 21(6), 2666. https://doi.org/10.1021/acs.nanolett.1c00539
Chicago Style (17th ed.) CitationMN, Almadhoun, Speckbacher M, Olsen BC, Luber EJ, Sayed SY, Tornow M, and Buriak JM. "Bipolar Resistive Switching in Junctions of Gallium Oxide and P-type Silicon." Nano Letters 21, no. 6 (2021): 2666. https://doi.org/10.1021/acs.nanolett.1c00539.
MLA (9th ed.) CitationMN, Almadhoun, et al. "Bipolar Resistive Switching in Junctions of Gallium Oxide and P-type Silicon." Nano Letters, vol. 21, no. 6, 2021, p. 2666, https://doi.org/10.1021/acs.nanolett.1c00539.
Warning: These citations may not always be 100% accurate.