Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.
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| Title: | Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon. |
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| Authors: | Almadhoun MN; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada., Speckbacher M; Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany., Olsen BC; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada., Luber EJ; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada., Sayed SY; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada., Tornow M; Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany.; Center for NanoScience (CeNS), Ludwig-Maximilians-University, 80539 Munich, Germany.; Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), 80686 Munich, Germany., Buriak JM; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada. |
| Source: | Nano letters [Nano Lett] 2021 Mar 24; Vol. 21 (6), pp. 2666-2674. Date of Electronic Publication: 2021 Mar 10. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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