APA (7th ed.) Citation

H, H., L, S., T, H., C, P., T, V., R, L., & M, C. (2021). Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM. Micron (Oxford, England : 1993), 150, 103123. https://doi.org/10.1016/j.micron.2021.103123

Chicago Style (17th ed.) Citation

H, Han, Strakos L, Hantschel T, Porret C, Vystavel T, Loo R, and Caymax M. "Crystalline Defect Analysis in Epitaxial Si0.7Ge0.3 Layer Using Site-specific ECCI-STEM." Micron (Oxford, England : 1993) 150 (2021): 103123. https://doi.org/10.1016/j.micron.2021.103123.

MLA (9th ed.) Citation

H, Han, et al. "Crystalline Defect Analysis in Epitaxial Si0.7Ge0.3 Layer Using Site-specific ECCI-STEM." Micron (Oxford, England : 1993), vol. 150, 2021, p. 103123, https://doi.org/10.1016/j.micron.2021.103123.