APA (7th ed.) Citation

RI, R., MG, K., AG, C., IV, Z., AA, C., SS, Z., . . . AM, M. (2021). Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors. ACS omega, 6(50), 34429. https://doi.org/10.1021/acsomega.1c04532

Chicago Style (17th ed.) Citation

RI, Romanov, Kozodaev MG, Chernikova AG, Zabrosaev IV, Chouprik AA, Zarubin SS, Novikov SM, Volkov VS, and Markeev AM. "Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors." ACS Omega 6, no. 50 (2021): 34429. https://doi.org/10.1021/acsomega.1c04532.

MLA (9th ed.) Citation

RI, Romanov, et al. "Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors." ACS Omega, vol. 6, no. 50, 2021, p. 34429, https://doi.org/10.1021/acsomega.1c04532.