Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors. - Romanov RI; Kozodaev MG; Chernikova AG; Zabrosaev IV; Chouprik AA; Zarubin SS; Novikov SM; Volkov VS; Markeev AM (ACS omega, 2021)