APA (7th ed.) Citation

RM, B., L, S., J, J., V, J., P, P., M, G., & I, K. (2022). High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials (Basel, Switzerland), 15(6), . https://doi.org/10.3390/ma15062066

Chicago Style (17th ed.) Citation

RM, Balagula, Subačius L, Jorudas J, Janonis V, Prystawko P, Grabowski M, and Kašalynas I. "High-Frequency and High-Power Performance of N-Type GaN Epilayers with Low Electron Density Grown on Native Substrate." Materials (Basel, Switzerland) 15, no. 6 (2022). https://doi.org/10.3390/ma15062066.

MLA (9th ed.) Citation

RM, Balagula, et al. "High-Frequency and High-Power Performance of N-Type GaN Epilayers with Low Electron Density Grown on Native Substrate." Materials (Basel, Switzerland), vol. 15, no. 6, 2022, https://doi.org/10.3390/ma15062066.