MJ, L., YT, C., SC, W., SF, H., RS, L., X, Z., . . . RM, L. (2022). Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer. Molecules (Basel, Switzerland), 27(21), . https://doi.org/10.3390/molecules27217596
Chicago Style (17th ed.) CitationMJ, Lai, Chang YT, Wang SC, Huang SF, Liu RS, Zhang X, Chen LC, and Lin RM. "Very Low-Efficiency Droop in 293 Nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed P-Type Layer." Molecules (Basel, Switzerland) 27, no. 21 (2022). https://doi.org/10.3390/molecules27217596.
MLA (9th ed.) CitationMJ, Lai, et al. "Very Low-Efficiency Droop in 293 Nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed P-Type Layer." Molecules (Basel, Switzerland), vol. 27, no. 21, 2022, https://doi.org/10.3390/molecules27217596.