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Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.

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Title: Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.
Authors: Lai MJ; Jiangxi Yuhongjin Material Technology Co., Ltd., Fuzhou 344100, China., Chang YT; Department of Physics, School of Science, Jimei University, Xiamen 361021, China., Wang SC; Changshu Institute of Technology, College of Electronics and Information Engineering, Changshu 215500, China., Huang SF; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.; Department of Public Health, Chang Gung University, Taoyuan 33302, Taiwan., Liu RS; Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528200, China., Zhang X; Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China., Chen LC; Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan., Lin RM; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.; Department of Electronic Engineering and Institute of Electronics Engineering, Chang Gung University, Taoyuan 33302, Taiwan.
Source: Molecules (Basel, Switzerland) [Molecules] 2022 Nov 05; Vol. 27 (21). Date of Electronic Publication: 2022 Nov 05.
Publication Type: Journal Article
Journal Info: Publisher: MDPI Country of Publication: Switzerland NLM ID: 100964009 Publication Model: Electronic Cited Medium: Internet ISSN: 1420-3049 (Electronic) Linking ISSN: 14203049 NLM ISO Abbreviation: Molecules Subsets: MEDLINE
Database: MEDLINE Ultimate
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  Data: Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.
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  Data: <searchLink fieldCode="AU" term="%22Lai+MJ%22">Lai MJ</searchLink>; Jiangxi Yuhongjin Material Technology Co., Ltd., Fuzhou 344100, China.<br /><searchLink fieldCode="AU" term="%22Chang+YT%22">Chang YT</searchLink>; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.<br /><searchLink fieldCode="AU" term="%22Wang+SC%22">Wang SC</searchLink>; Changshu Institute of Technology, College of Electronics and Information Engineering, Changshu 215500, China.<br /><searchLink fieldCode="AU" term="%22Huang+SF%22">Huang SF</searchLink>; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.; Department of Public Health, Chang Gung University, Taoyuan 33302, Taiwan.<br /><searchLink fieldCode="AU" term="%22Liu+RS%22">Liu RS</searchLink>; Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528200, China.<br /><searchLink fieldCode="AU" term="%22Zhang+X%22">Zhang X</searchLink>; Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.<br /><searchLink fieldCode="AU" term="%22Chen+LC%22">Chen LC</searchLink>; Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.<br /><searchLink fieldCode="AU" term="%22Lin+RM%22">Lin RM</searchLink>; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.; Department of Electronic Engineering and Institute of Electronics Engineering, Chang Gung University, Taoyuan 33302, Taiwan.
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  Data: <searchLink fieldCode="JN" term="%22100964009%22">Molecules (Basel, Switzerland)</searchLink> [Molecules] 2022 Nov 05; Vol. 27 (21). <i>Date of Electronic Publication: </i>2022 Nov 05.
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        Value: 10.3390/molecules27217596
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      – TitleFull: Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.
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            – D: 05
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              Text: 2022 Nov 05
              Type: published
              Y: 2022
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