Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.
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| Title: | Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer. |
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| Authors: | Lai MJ; Jiangxi Yuhongjin Material Technology Co., Ltd., Fuzhou 344100, China., Chang YT; Department of Physics, School of Science, Jimei University, Xiamen 361021, China., Wang SC; Changshu Institute of Technology, College of Electronics and Information Engineering, Changshu 215500, China., Huang SF; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.; Department of Public Health, Chang Gung University, Taoyuan 33302, Taiwan., Liu RS; Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528200, China., Zhang X; Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China., Chen LC; Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan., Lin RM; Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.; Department of Electronic Engineering and Institute of Electronics Engineering, Chang Gung University, Taoyuan 33302, Taiwan. |
| Source: | Molecules (Basel, Switzerland) [Molecules] 2022 Nov 05; Vol. 27 (21). Date of Electronic Publication: 2022 Nov 05. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: MDPI Country of Publication: Switzerland NLM ID: 100964009 Publication Model: Electronic Cited Medium: Internet ISSN: 1420-3049 (Electronic) Linking ISSN: 14203049 NLM ISO Abbreviation: Molecules Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
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