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Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.

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Title: Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.
Authors: Koroleva AA; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Chernikova AG; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Zarubin SS; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Korostylev E; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Khakimov RR; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Zhuk MY; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Markeev AM; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Source: ACS omega [ACS Omega] 2022 Dec 07; Vol. 7 (50), pp. 47084-47095. Date of Electronic Publication: 2022 Dec 07 (Print Publication: 2022).
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101691658 Publication Model: eCollection Cited Medium: Internet ISSN: 2470-1343 (Electronic) Linking ISSN: 24701343 NLM ISO Abbreviation: ACS Omega Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO<subscript>2</subscript> Insets.
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  Data: <searchLink fieldCode="AU" term="%22Koroleva+AA%22">Koroleva AA</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.<br /><searchLink fieldCode="AU" term="%22Chernikova+AG%22">Chernikova AG</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.<br /><searchLink fieldCode="AU" term="%22Zarubin+SS%22">Zarubin SS</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.<br /><searchLink fieldCode="AU" term="%22Korostylev+E%22">Korostylev E</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.<br /><searchLink fieldCode="AU" term="%22Khakimov+RR%22">Khakimov RR</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.<br /><searchLink fieldCode="AU" term="%22Zhuk+MY%22">Zhuk MY</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.<br /><searchLink fieldCode="AU" term="%22Markeev+AM%22">Markeev AM</searchLink>; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
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  Data: <searchLink fieldCode="JN" term="%22101691658%22">ACS omega</searchLink> [ACS Omega] 2022 Dec 07; Vol. 7 (50), pp. 47084-47095. <i>Date of Electronic Publication: </i>2022 Dec 07 (<i>Print Publication: </i>2022).
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        Value: 10.1021/acsomega.2c06237
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        Text: English
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      – TitleFull: Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.
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            – D: 07
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              Text: 2022 Dec 07
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              Y: 2022
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