Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.
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| Title: | Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO |
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| Authors: | Koroleva AA; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Chernikova AG; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Zarubin SS; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Korostylev E; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Khakimov RR; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Zhuk MY; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Markeev AM; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia. |
| Source: | ACS omega [ACS Omega] 2022 Dec 07; Vol. 7 (50), pp. 47084-47095. Date of Electronic Publication: 2022 Dec 07 (Print Publication: 2022). |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101691658 Publication Model: eCollection Cited Medium: Internet ISSN: 2470-1343 (Electronic) Linking ISSN: 24701343 NLM ISO Abbreviation: ACS Omega Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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