Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics.

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Bibliographic Details
Title: Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics.
Authors: Di Palma V; Department of Materials Science, University of Milano Bicocca, Via R. Cozzi 55, 20125 Milano, Italy., Pianalto A; Department of Materials Science, University of Milano Bicocca, Via R. Cozzi 55, 20125 Milano, Italy., Perego M; CNR-IMM Unit of Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, Italy., Tallarida G; CNR-IMM Unit of Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, Italy., Codegoni D; STMicroelectronics, Via C. Olivetti 2, 20864 Agrate Brianza, Italy., Fanciulli M; Department of Materials Science, University of Milano Bicocca, Via R. Cozzi 55, 20125 Milano, Italy.
Source: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Mar 08; Vol. 13 (6). Date of Electronic Publication: 2023 Mar 08.
Publication Type: Journal Article
Journal Info: Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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