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Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications.

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Bibliographic Details
Title: Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications.
Authors: Ra HS; Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.; ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain., Lee SH; Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Jeong SJ; Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Cho S; Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Lee JS; Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.
Source: Small methods [Small Methods] 2024 Feb; Vol. 8 (2), pp. e2300245. Date of Electronic Publication: 2023 Jun 17.
Publication Type: Journal Article; Review
Journal Info: Publisher: WILEY-VCH Verlag GmbH & Co. KGaA Country of Publication: Germany NLM ID: 101724536 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2366-9608 (Electronic) Linking ISSN: 23669608 NLM ISO Abbreviation: Small Methods Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2366-9608
DOI:10.1002/smtd.202300245