Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors.
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| Title: | Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe |
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| Authors: | Li X; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States., Zhou P; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States., Hu X; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States., Rivers E; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States., Watanabe K; Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Taniguchi T; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Akinwande D; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States., Friedman JS; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States., Incorvia JAC; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States. |
| Source: | ACS nano [ACS Nano] 2023 Jul 11; Vol. 17 (13), pp. 12798-12808. Date of Electronic Publication: 2023 Jun 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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