A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.
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| Title: | A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits. |
|---|---|
| Authors: | Vatsyayan R; Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92092 USA., Dayeh SA; Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92092 USA. |
| Source: | IEEE transactions on electron devices [IEEE Trans Electron Devices] 2023 Sep; Vol. 70 (9), pp. 4647-4654. Date of Electronic Publication: 2023 Jul 25. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Institute of Electrical and Electronics Engineers Country of Publication: United States NLM ID: 0422675 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0018-9383 (Print) Linking ISSN: 00189383 NLM ISO Abbreviation: IEEE Trans Electron Devices Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 37680851 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Vatsyayan+R%22">Vatsyayan R</searchLink>; Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92092 USA.<br /><searchLink fieldCode="AU" term="%22Dayeh+SA%22">Dayeh SA</searchLink>; Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92092 USA. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%220422675%22">IEEE transactions on electron devices</searchLink> [IEEE Trans Electron Devices] 2023 Sep; Vol. 70 (9), pp. 4647-4654. <i>Date of Electronic Publication: </i>2023 Jul 25. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Institute+of+Electrical+and+Electronics+Engineers%22">Institute of Electrical and Electronics Engineers </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>0422675 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Print <i>ISSN: </i>0018-9383 (Print) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2200189383%22">00189383 </searchLink><i>NLM ISO Abbreviation: </i>IEEE Trans Electron Devices <i>Subsets: </i>PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=37680851 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/ted.2023.3284803 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 4647 Titles: – TitleFull: A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Vatsyayan R – PersonEntity: Name: NameFull: Dayeh SA IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: 2023 Sep Type: published Y: 2023 Identifiers: – Type: issn-print Value: 0018-9383 Numbering: – Type: volume Value: 70 – Type: issue Value: 9 Titles: – TitleFull: IEEE transactions on electron devices Type: main |
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