APA (7th ed.) Citation

PH, H., YY, Y., SA, C., RH, C., PH, P., CC, C., . . . CH, C. (2023). High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping. Nano letters, 23(22), 10236. https://doi.org/10.1021/acs.nanolett.3c02757

Chicago Style (17th ed.) Citation

PH, Ho, Yang YY, Chou SA, Cheng RH, Pao PH, Cheng CC, Radu I, and Chien CH. "High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping." Nano Letters 23, no. 22 (2023): 10236. https://doi.org/10.1021/acs.nanolett.3c02757.

MLA (9th ed.) Citation

PH, Ho, et al. "High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping." Nano Letters, vol. 23, no. 22, 2023, p. 10236, https://doi.org/10.1021/acs.nanolett.3c02757.