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High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping.

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Title: High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping.
Authors: Ho PH; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Yang YY; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chou SA; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Cheng RH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Pao PH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Cheng CC; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Radu I; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Chien CH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Source: Nano letters [Nano Lett] 2023 Nov 22; Vol. 23 (22), pp. 10236-10242. Date of Electronic Publication: 2023 Oct 31.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: High-Performance WSe<subscript>2</subscript> Top-Gate Devices with Strong Spacer Doping.
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  Data: <searchLink fieldCode="AU" term="%22Ho+PH%22">Ho PH</searchLink>; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan.<br /><searchLink fieldCode="AU" term="%22Yang+YY%22">Yang YY</searchLink>; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chou+SA%22">Chou SA</searchLink>; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan.<br /><searchLink fieldCode="AU" term="%22Cheng+RH%22">Cheng RH</searchLink>; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Pao+PH%22">Pao PH</searchLink>; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Cheng+CC%22">Cheng CC</searchLink>; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan.<br /><searchLink fieldCode="AU" term="%22Radu+I%22">Radu I</searchLink>; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chien+CH%22">Chien CH</searchLink>; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
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  Data: <searchLink fieldCode="JN" term="%22101088070%22">Nano letters</searchLink> [Nano Lett] 2023 Nov 22; Vol. 23 (22), pp. 10236-10242. <i>Date of Electronic Publication: </i>2023 Oct 31.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101088070 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1530-6992 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2215306984%22">15306984 </searchLink><i>NLM ISO Abbreviation: </i>Nano Lett <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1021/acs.nanolett.3c02757
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              Text: 2023 Nov 22
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              Y: 2023
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