High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping.
Saved in:
| Title: | High-Performance WSe |
|---|---|
| Authors: | Ho PH; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Yang YY; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chou SA; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Cheng RH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Pao PH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Cheng CC; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Radu I; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan., Chien CH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan. |
| Source: | Nano letters [Nano Lett] 2023 Nov 22; Vol. 23 (22), pp. 10236-10242. Date of Electronic Publication: 2023 Oct 31. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
Be the first to leave a comment!
