APA (7th ed.) Citation

T, L., JH, L., D, K., J, B., S, J., SM, Y., . . . J, J. (2024). Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory. Advanced materials (Deerfield Beach, Fla.), 36(4), e2308301. https://doi.org/10.1002/adma.202308301

Chicago Style (17th ed.) Citation

T, Lim, Lee JH, Kim D, Bae J, Jung S, Yang SM, Jang JI, and Jang J. "Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory." Advanced Materials (Deerfield Beach, Fla.) 36, no. 4 (2024): e2308301. https://doi.org/10.1002/adma.202308301.

MLA (9th ed.) Citation

T, Lim, et al. "Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory." Advanced Materials (Deerfield Beach, Fla.), vol. 36, no. 4, 2024, p. e2308301, https://doi.org/10.1002/adma.202308301.