| Authors: |
Ren SG; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Dong AW; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Yang L; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Xue YB; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Li JC; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Yu YJ; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Zhou HJ; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Zuo WB; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Li Y; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Cheng WM; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Miao XS; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China. |
