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Self-Rectifying Memristors for Three-Dimensional In-Memory Computing.

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Title: Self-Rectifying Memristors for Three-Dimensional In-Memory Computing.
Authors: Ren SG; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Dong AW; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Yang L; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Xue YB; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Li JC; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Yu YJ; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Zhou HJ; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Zuo WB; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Li Y; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Cheng WM; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Miao XS; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jan; Vol. 36 (4), pp. e2307218. Date of Electronic Publication: 2023 Nov 27.
Publication Type: Journal Article; Review
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 37972344
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Self-Rectifying Memristors for Three-Dimensional In-Memory Computing.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Ren+SG%22">Ren SG</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Dong+AW%22">Dong AW</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Yang+L%22">Yang L</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Xue+YB%22">Xue YB</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Li+JC%22">Li JC</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Yu+YJ%22">Yu YJ</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Zhou+HJ%22">Zhou HJ</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Zuo+WB%22">Zuo WB</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.<br /><searchLink fieldCode="AU" term="%22Li+Y%22">Li Y</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.<br /><searchLink fieldCode="AU" term="%22Cheng+WM%22">Cheng WM</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.<br /><searchLink fieldCode="AU" term="%22Miao+XS%22">Miao XS</searchLink>; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2024 Jan; Vol. 36 (4), pp. e2307218. <i>Date of Electronic Publication: </i>2023 Nov 27.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article; Review
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=37972344
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/adma.202307218
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: e2307218
    Titles:
      – TitleFull: Self-Rectifying Memristors for Three-Dimensional In-Memory Computing.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ren SG
      – PersonEntity:
          Name:
            NameFull: Dong AW
      – PersonEntity:
          Name:
            NameFull: Yang L
      – PersonEntity:
          Name:
            NameFull: Xue YB
      – PersonEntity:
          Name:
            NameFull: Li JC
      – PersonEntity:
          Name:
            NameFull: Yu YJ
      – PersonEntity:
          Name:
            NameFull: Zhou HJ
      – PersonEntity:
          Name:
            NameFull: Zuo WB
      – PersonEntity:
          Name:
            NameFull: Li Y
      – PersonEntity:
          Name:
            NameFull: Cheng WM
      – PersonEntity:
          Name:
            NameFull: Miao XS
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: 2024 Jan
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-electronic
              Value: 1521-4095
          Numbering:
            – Type: volume
              Value: 36
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Advanced materials (Deerfield Beach, Fla.)
              Type: main
ResultId 1