| Authors: |
Doroshina NV; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Streletskiy OA; Faculty of Physics, M.V. Lomonosov Moscow State University, 119991, Moscow, Russia., Zavidovskiy IA; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Tatmyshevskiy MK; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Tselikov GI; Emerging Technologies Research Center, XPANCEO, Dubai, 00000, United Arab Emirates., Kapitanova OO; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia.; Faculty of Chemistry, M.V. Lomonosov Moscow State University, 119991, Moscow, Russia., Syuy AV; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Romanov R; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Mishra P; Quantum Materials and Devices Laboratory, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), 110025, New Delhi, India., Bobrovs V; Institute of Photonics, Electronics and Telecommunications, Riga, 1048, Latvia., Markeev AM; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Yakubovsky DI; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia., Veselova IA; Faculty of Chemistry, M.V. Lomonosov Moscow State University, 119991, Moscow, Russia., Arsenin AV; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia.; Yerevan State University, 0025, Yerevan, Armenia., Volkov VS; Emerging Technologies Research Center, XPANCEO, Dubai, 00000, United Arab Emirates.; Yerevan State University, 0025, Yerevan, Armenia., Novikov SM; Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow, Russia. |
