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Epitaxial Metal Electrodeposition Controlled by Graphene Layer Thickness.

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Title: Epitaxial Metal Electrodeposition Controlled by Graphene Layer Thickness.
Authors: Wright SC; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Brea C; Department of Chemistry and Biochemistry, Queens College of the City University of New York, New York, New York 11367, United States., Baxter JS; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States., Saini S; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Alsaç EP; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Yoon SG; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Boebinger MG; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States., Hu G; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., McDowell MT; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Source: ACS nano [ACS Nano] 2024 May 28; Vol. 18 (21), pp. 13866-13875. Date of Electronic Publication: 2024 May 15.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: <searchLink fieldCode="AU" term="%22Wright+SC%22">Wright SC</searchLink>; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.<br /><searchLink fieldCode="AU" term="%22Brea+C%22">Brea C</searchLink>; Department of Chemistry and Biochemistry, Queens College of the City University of New York, New York, New York 11367, United States.<br /><searchLink fieldCode="AU" term="%22Baxter+JS%22">Baxter JS</searchLink>; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States.<br /><searchLink fieldCode="AU" term="%22Saini+S%22">Saini S</searchLink>; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.<br /><searchLink fieldCode="AU" term="%22Alsaç+EP%22">Alsaç EP</searchLink>; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.<br /><searchLink fieldCode="AU" term="%22Yoon+SG%22">Yoon SG</searchLink>; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.<br /><searchLink fieldCode="AU" term="%22Boebinger+MG%22">Boebinger MG</searchLink>; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States.<br /><searchLink fieldCode="AU" term="%22Hu+G%22">Hu G</searchLink>; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.<br /><searchLink fieldCode="AU" term="%22McDowell+MT%22">McDowell MT</searchLink>; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
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  Data: <searchLink fieldCode="JN" term="%22101313589%22">ACS nano</searchLink> [ACS Nano] 2024 May 28; Vol. 18 (21), pp. 13866-13875. <i>Date of Electronic Publication: </i>2024 May 15.
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        Value: 10.1021/acsnano.4c02981
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              Text: 2024 May 28
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