APA (7th ed.) Citation

WN, C., M, N., Y, M., X, H., J, Q., J, Z., & X, Z. (2024). Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide. Nano letters, 24(21), 6441. https://doi.org/10.1021/acs.nanolett.4c01771

Chicago Style (17th ed.) Citation

WN, Cheng, Niu M, Meng Y, Han X, Qiao J, Zhang J, and Zhao X. "Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide." Nano Letters 24, no. 21 (2024): 6441. https://doi.org/10.1021/acs.nanolett.4c01771.

MLA (9th ed.) Citation

WN, Cheng, et al. "Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide." Nano Letters, vol. 24, no. 21, 2024, p. 6441, https://doi.org/10.1021/acs.nanolett.4c01771.