| Authors: |
He X; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China., Sun R; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China., Xu X; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering Xia-men University, Xiamen 361005, China., Geng H; Ningbo ANN Semiconductor Co., Ltd., Ningbo 315336, China., Qi S; Ningbo ANN Semiconductor Co., Ltd., Ningbo 315336, China., Zhang KH; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering Xia-men University, Xiamen 361005, China., Long H; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China. |
