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Excellent Wavelength Selectivity of p-AlGaN/n-Ga2O3 Solar-Blind UVC PD.

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Title: Excellent Wavelength Selectivity of p-AlGaN/n-Ga2O3 Solar-Blind UVC PD.
Authors: He X; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China., Sun R; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China., Xu X; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering Xia-men University, Xiamen 361005, China., Geng H; Ningbo ANN Semiconductor Co., Ltd., Ningbo 315336, China., Qi S; Ningbo ANN Semiconductor Co., Ltd., Ningbo 315336, China., Zhang KH; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering Xia-men University, Xiamen 361005, China., Long H; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Nov 20; Vol. 16 (46), pp. 64146-64155. Date of Electronic Publication: 2024 Nov 08.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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PubType: Academic Journal
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  Data: Excellent Wavelength Selectivity of p-AlGaN/n-Ga<subscript>2</subscript>O<subscript>3</subscript> Solar-Blind UVC PD.
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  Data: <searchLink fieldCode="AU" term="%22He+X%22">He X</searchLink>; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China.<br /><searchLink fieldCode="AU" term="%22Sun+R%22">Sun R</searchLink>; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China.<br /><searchLink fieldCode="AU" term="%22Xu+X%22">Xu X</searchLink>; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering Xia-men University, Xiamen 361005, China.<br /><searchLink fieldCode="AU" term="%22Geng+H%22">Geng H</searchLink>; Ningbo ANN Semiconductor Co., Ltd., Ningbo 315336, China.<br /><searchLink fieldCode="AU" term="%22Qi+S%22">Qi S</searchLink>; Ningbo ANN Semiconductor Co., Ltd., Ningbo 315336, China.<br /><searchLink fieldCode="AU" term="%22Zhang+KH%22">Zhang KH</searchLink>; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering Xia-men University, Xiamen 361005, China.<br /><searchLink fieldCode="AU" term="%22Long+H%22">Long H</searchLink>; School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University Xiamen, Fujian 361005, China.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2024 Nov 20; Vol. 16 (46), pp. 64146-64155. <i>Date of Electronic Publication: </i>2024 Nov 08.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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      – Type: doi
        Value: 10.1021/acsami.4c12680
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        Text: English
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        StartPage: 64146
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      – TitleFull: Excellent Wavelength Selectivity of p-AlGaN/n-Ga2O3 Solar-Blind UVC PD.
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            NameFull: He X
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              Text: 2024 Nov 20
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              Y: 2024
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