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Author Correction: A hBN/Ga2O3 pn junction diode.

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Title: Author Correction: A hBN/Ga2O3 pn junction diode.
Authors: Marye SA; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Tsai XY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Kumar RR; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Tarntair FG; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Horng RH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. rayhua@nycu.edu.tw., Tumilty N; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. ntumilty@nycu.edu.tw.
Source: Scientific reports [Sci Rep] 2024 Dec 12; Vol. 14 (1), pp. 30454. Date of Electronic Publication: 2024 Dec 12.
Publication Type: Published Erratum
Journal Info: Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Author Correction: A hBN/Ga<subscript>2</subscript>O<subscript>3</subscript> pn junction diode.
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  Data: <searchLink fieldCode="AU" term="%22Marye+SA%22">Marye SA</searchLink>; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.<br /><searchLink fieldCode="AU" term="%22Tsai+XY%22">Tsai XY</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.<br /><searchLink fieldCode="AU" term="%22Kumar+RR%22">Kumar RR</searchLink>; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.<br /><searchLink fieldCode="AU" term="%22Tarntair+FG%22">Tarntair FG</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.<br /><searchLink fieldCode="AU" term="%22Horng+RH%22">Horng RH</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. rayhua@nycu.edu.tw.<br /><searchLink fieldCode="AU" term="%22Tumilty+N%22">Tumilty N</searchLink>; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. ntumilty@nycu.edu.tw.
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  Data: <searchLink fieldCode="JN" term="%22101563288%22">Scientific reports</searchLink> [Sci Rep] 2024 Dec 12; Vol. 14 (1), pp. 30454. <i>Date of Electronic Publication: </i>2024 Dec 12.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Publishing+Group%22">Nature Publishing Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101563288 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2045-2322 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220452322%22">20452322 </searchLink><i>NLM ISO Abbreviation: </i>Sci Rep <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1038/s41598-024-81771-7
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              Text: 2024 Dec 12
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