Author Correction: A hBN/Ga2O3 pn junction diode.
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| Title: | Author Correction: A hBN/Ga |
|---|---|
| Authors: | Marye SA; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Tsai XY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Kumar RR; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Tarntair FG; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Horng RH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. rayhua@nycu.edu.tw., Tumilty N; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. ntumilty@nycu.edu.tw. |
| Source: | Scientific reports [Sci Rep] 2024 Dec 12; Vol. 14 (1), pp. 30454. Date of Electronic Publication: 2024 Dec 12. |
| Publication Type: | Published Erratum |
| Journal Info: | Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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