APA (7th ed.) Citation

E, S., S, B., G, G., M, C., LI, W., L, W., . . . ID, S. (2025). Amorphous nitride semiconductors with highly tunable optical and electronic properties: The benefits of disorder in Ca-Zn-N thin films. Materials horizons, 12(6), 1971. https://doi.org/10.1039/d4mh01525h

Chicago Style (17th ed.) Citation

E, Sirotti, et al. "Amorphous Nitride Semiconductors with Highly Tunable Optical and Electronic Properties: The Benefits of Disorder in Ca-Zn-N Thin Films." Materials Horizons 12, no. 6 (2025): 1971. https://doi.org/10.1039/d4mh01525h.

MLA (9th ed.) Citation

E, Sirotti, et al. "Amorphous Nitride Semiconductors with Highly Tunable Optical and Electronic Properties: The Benefits of Disorder in Ca-Zn-N Thin Films." Materials Horizons, vol. 12, no. 6, 2025, p. 1971, https://doi.org/10.1039/d4mh01525h.